sensitron semiconductor ? 2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631) 586 - 7600 ? fax (631) 242 - 9798 ? www.sensitron.com ? sales@sensitron.com SRADM1008 technical data data sheet 5406 , rev. - hermetic rad hard power mosfet features: ? low rds(on) ? single ev ent effect (see) hardened, o let 85, range: 118 m ? vgs = - 1 0 v, vds = 250v ? vgs = - 15v, vds = 12 0v o let 55, range: 90 m ? vgs = - 15v, vds = 250v ? vgs = - 20v, vds = 160v ? total ioni zation dose (tid) hardened, 100kr ad ? isolated to - 257 package ? near equivalent to irh ys 67234 cm maximum ratings all ratings are at t c = 25 ? c unless otherwise specified. rating symbol min. typ. max. units drain to source voltage v ds - - 250 volts gate to source voltage v gs - - ? 20 volts on - state drain current (tc = 25 0 c) i d - - 12.4 amps on - state drain current (tc = 100 0 c) i d - - 8 amps pulsed drain current (limited by t jmax ) i dm - - 50 amps operating and storage temperature t op /t stg - 55 - +150 ? c total device dissipation p d - - 75 watts thermal resistance, junction to case r thjc - - 1.66 ? c/w single pulse avalanc h e (limited by t jmax ) e as - 60 - mj electrical characteristics characteristic symbol min. typ. max. units drain source breakdown v gs = 0v, i d = 250 ? a b vdss 250 - - volts static drain to source on state resistance v gs = 10v, i d = 8 a r ds(on) - - 0. 1 3 ? gate threshold voltage v ds = v gs , i d = 1m a v gs(t h) 2.0 - 4.0 volts zero gate voltage drain current v ds = 200v , v gs = 0v i dss - - 2 5 ? a gate to source leakage forward v gs = 20v gate to source leakage re verse v gs = - 20v i gss - - - - 100 - 100 na turn on delay time v dd = 0 .5 v ds , rise time i d = 8 a , turn off delay time r g = 4.7 ? fall tim e t d(on) t r t d(off) t f - - - - - - - - 25 25 35 20 nsec diod e forward voltage i s = 12.4 a v sd - - 1. 2 volts reverse recovery time if = 12.4 a, di/dt = 100a/s t rr - - 4 00 nsec inp ut capacitance v gs = 0 v output capacitance v ds = 100 v reverse transfer capacitance f = 1.0mhz c iss c oss c rss - - - 1600 120 3 - - - pf total gate charge v dd = 0 .5v ds , i d = 12.4 a, v gs = 10v q g - - 42 nc
sensitron semiconductor ? 2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631) 586 - 7600 ? fax (631) 242 - 9798 ? www.sensitron.com ? sales@sensitron.com SRADM1008 technical data data sheet 5406 , rev. - mechanical dimensions: in inches / mm device type pin - 1 pin - 2 pin - 3 n - channel mosfet to - 257 package drain source gate **note: this product is subject to the international traffic in arms regulations (itar), 22 c.f.r. parts 120 - 130, and may not be exported without the appropriate u.s . department of state authorization. disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to change without prior notice to impro ve product characteristics . before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the latest version of t he datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and avia tion, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail - safe precautions or other arrangement . 3 - in no event shall sensitron semic onductor be liable for any damages that may result from an accident or any other cause during operation of the users units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual proper ty claims or any other p roblems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulti ng from use at a va lue exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or par t, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applicat ion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance wit h related laws and regulations. to - 257 1 2 3 .200 .190 (5.08 4.82) .045 .035 (1.14 0.89) .120(3.05) bsc .430 .410 (10.92 10.41) .420 .410 (10.67 10.41) .665 .645 (16.89 16.38) .537 .527 (13.64 13.39) 1.132 1.032 (28.75 26.21) .035 .025 (0.89 0.63) 3 places .100(2.54) bsc 2 places .150 .140 (3.81 3.56) dia.
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